| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0ba3e4de4595567dd1db6a2ca7744f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a057394ed8ac90b1357be0f83b0a1a96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7289d50b84c74e8150618fb4935a2436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0a74a115e611318f600a03b587473f8 |
| publicationDate |
2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-451460-B |
| titleOfInvention |
Semiconductor integrated circuit device and method for making the same |
| abstract |
The cap insulating film on the gate electrode is formed into a laminated structure of a silicon oxide film and a silicon nitride film formed thereon. When forming the connection hole, an etching is carried out in a condition where the silicon oxide film is easier to be etched than the silicon nitride film. The etching is terminated when the silicon nitride film is exposed. Thereafter, an etching is carried out in a condition where the silicon nitride film is easier to be etched than the silicon oxide film, thereby forming the connection hole exposed from the semiconductor substrate 1. |
| priorityDate |
1998-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |