http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-436923-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-186 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32743 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 1999-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ea5aeff87a8527e45289fdbd0b597a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a7fb9ea9e36a7fc4f82745cedb066e4 |
| publicationDate | 2001-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-436923-B |
| titleOfInvention | Method and apparatus for etch rate stabilization |
| abstract | A method of consecutively processing a series of semiconductor substrates with minimal etch rate variation. The method includes steps of (a) placing a semicondcutor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by maintaining an amount of reactive gas in contact with an exposed surface of the substrate at a level sufficient to obtain a repeatable rate of etching for each of the substrates processed during repeated step (c). An apparatus useful for carrying out the method includes a plasma etching chamber having a substrate support in an interior thereof and a dielectric member facing the substrate support, a gas supply supplying etching gas into the interior of the chamber, an antenna passing RF energy through the dielectric member, a vacuum pump separated from the interior of the chamber by an adjustable gate valve, and a controller maintaining an anount of reactive gas in contact with an exposed surface of the substrate at a level sufficient to obtain a repeatable rate of etching for each substrate processed in the chamber during consecutive single substrate etching of batch of substrates. |
| priorityDate | 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23940 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577462 |
Total number of triples: 23.