http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-434647-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1998-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d7fd9acfaeb4a0e4c6f84823bdb248 |
| publicationDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-434647-B |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | In a semiconductor device manufacturing method, a gate insulating film is formed on a silicon substrate, a conductive film made of a conductive material is formed on an insulating film, an anti-reflection coating made of an organic material is formed on the conductive film, a photosensitive resist film is formed on the anti-reflection coating, a predetermined optical image on the photoresist film is developed by exposure to form a resist pattern, the anti-reflection coating is then selectively removed by dry etching using a plasma of a gas mixture containing oxygen gas, a reactive gas, and an inert gas, while using the photoresist pattern as a mask, thereby forming an anti-reflection pattern, and the conductive film is etched by using the resist pattern as a mask, thereby forming an electrode. |
| priorityDate | 1997-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.