| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate |
1998-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51f7da9f6fd60ce1ec68936b5b746b57 |
| publicationDate |
2001-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-432448-B |
| titleOfInvention |
Etching method |
| abstract |
An etching method can restrict the side etching (corrosion) of an AlCu film as an upper layer upon etching of a TiN film as a lower layer. The etching method is characterized by using oxide film as the mask to etch the stacked film of AlCu film/TiN film, and use a compound gas containing a chlorine atom and a mixture gas of the etching gas and an additive gas without Cl2 to etch the TiN film on the lower layer. Therefore, the corrosion resistance of AlCu film against the etching gas can be improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I633601-B |
| priorityDate |
1997-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |