| abstract |
The present invention provides a semiconductor device having an insulating film with superior reliability. Boron ions are implanted in an organic SOG film 6 by ion implanting method, in a state where a silicon nitride film 8 is formed on the organic SOG film 6. Thus, film property is considerably improved, and water and hydroxyl groups in the film is considerably reduced irrespective of the dose of the ions. Then, a stacked film constituted of the organic SOG film 6 (reformed SOG film 7) and the silicon nitride film 8 on the film 7 is used as an interlayer insulating film or a passivation film, and therefore provides effective function on the semiconductor device. |