http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-426912-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86f3809ce25420b9fba0bd65909af98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23abd8cb7c2d7a44e105e248b6344157 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed7b9131574c697a9e7dab44e5b1f2a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d2972d5e367adc3e77ce3ba54d0a75 |
| publicationDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-426912-B |
| titleOfInvention | Method for improving absolute dimension uniformity of integrated circuit in dual-coil inductively coupled plasma etching reaction chamber |
| abstract | A method for improving the absolute dimension uniformity of an integrated circuit in a dual-coil inductively coupled plasma etching reaction chamber, comprises providing a semiconductor substrate; forming a film layer covering the semiconductor substrate; defining a photoresist pattern to the film layer; etching the photoresist pattern in a dual-coil inductively coupled plasma etching reaction chamber; adjusting the inside plasma power and the outside plasma power of the reaction chamber so that the center region and the periphery region of the photoresist pattern have the same absolute dimension; etching the film layer in the dual-coil inductively coupled plasma etching reaction chamber, and using the photoresist pattern as the etching mask, and adjusting the inside plasma power and the outside plasma power of the reaction chamber so that the center region and the peripheral region of the film layer have the same difference in the absolute dimension prior to and after the etching, and have the same etching rate. |
| priorityDate | 1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.