http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-411520-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1999-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_267073732a7289cf9ab15197a1f88305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2598ecd67fcb292b600df7f0696ddf1c |
| publicationDate | 2000-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-411520-B |
| titleOfInvention | Plasma etching process |
| abstract | Contact holes (36a, 36b) are formed in a silicon oxide insulation film 31 by a plasma etching process so that the contact holes can extend to wiring layers 33a 33b which are embedded in the insulation film 31 at deep and shallow positions, respectively. A treatment gas containing C4F8, CO, Ar is used, and the treatment pressure is set to be 30-60 mTorr, while the partial pressure of C4F8 is set to be 0.07 to 0.35 mTorr. The treatment gas is formed into a plasma under these conditions, and the insulation film 31 is etched with the plasma to form the contact holes 36a, 36b. |
| priorityDate | 1998-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.