http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-407304-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-517 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 |
| filingDate | 1998-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c894e7b260f41d285033d22b06fd5bcd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60560cd1e241d8f8e05951de485694e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d59e7cfad1287d2239068954bfa919b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_042c819a960d30f096ac24aec49d38c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db6be5fcd80e9bfb6ea38bccbbaedd1e |
| publicationDate | 2000-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-407304-B |
| titleOfInvention | Mixed frequency CVD process and apparatus |
| abstract | A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I505752-B |
| priorityDate | 1997-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.