http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-406286-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1999-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab82d2fa67c0a1a0733250dd4d1dc7cc |
| publicationDate | 2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-406286-B |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | In a method of manufacturing a semiconductor device, in the first step, a lower interconnection is formed on a semiconductor substrate through a first interlevel insulating film. In the second step, a second interlevel insulating film is formed on the semiconductor substrate including the lower interconnection. In the third step, a through hole is formed in the second interlevel insulating film to reach the lower interconnection. In the fourth step, after the third step is ended, a surface of the lower interconnection including a side surface thereof exposed to a bottom portion of the through hole is etched without exposing the semiconductor substrate to the atmosphere. In the fifth step, a plug made of a conductive material is formed in the through hole. In the sixth step, an upper interconnection to be connected to the plug is formed on the second interlevel insulating film. |
| priorityDate | 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.