http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-402811-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5163e4cb8dd98b5d445843da83fa5b23 |
| publicationDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-402811-B |
| titleOfInvention | The manufacture method of the DRAM capacitor |
| abstract | A manufacture method of the DRAM capacitor, which comprises: firstly to form the trench on the insulative layer of the substrate; next, cover on the insulative layer the first electric- conductive layer conformed with the trench, then cover on the electric layer with photoresist layer; and proceed the three etch stages process to make the first electric conductive layer into a pattern. First, proceed the first stage of etch process to peel off part of the photoresist layer in order to expose the first electrically conductive layer excepting the trench; next, proceed the second stage of etch process which utilizes isotropical chemical dry etch process to make the insulative layer exposed a thickness in the trench to completely peel off the first electric-conductive layer excepting the trench; proceed the third stage of etch process to completely peeloff the photoresist layer. Then, form the dielectrics and the second electric-conductive layer in order on the first electric-conductive layer. |
| priorityDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.