| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1998-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71b650291d6464631c249231818c212b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33c9777ce64fa0714045ef72f1d806fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8f91868e8a98fc7456cb2263cc0d35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63862f8939574d17d1bc9867d5ef0a5b |
| publicationDate |
2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-400578-B |
| titleOfInvention |
Method of etching aluminum-based layer |
| abstract |
An Al-based metal layer is formed on the semiconductor body and then coated with a layer of photoresist. A resist pattern is then formed in the layer of photoresist by means of lithography. The resulting semiconductor substrate is placed in the reaction chamber of ICP(Inductively Coupled Plasma) equipment. A mixed gas containing HCI and BCI3 is introduced into the reaction chamber to etch the metal layer using the photoresist layer as a mask, thereby forming interconnect lines. The etching is effected by CI ions or CI active species disassociated from either HCI or BCI3. In this etch process, the CI ions or CI active species react with the photoresist to thereby form a sidewall protection film consisting of AI2O3 at sidewalls of the lines of interconnect. |
| priorityDate |
1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |