http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-389967-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bf01555cb22ea19003f6cc91c06f0ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8759ba78b5f91f7ddd9a448d60d80d9d |
| publicationDate | 2000-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-389967-B |
| titleOfInvention | Method of selectively etching the silicon nitride film on the silicon oxide layer |
| abstract | The etching process of silicon nitride film on the silicon oxide layer of the silicon substrate includes the procedures as described below. Apply the first RF power with 13.56~60 MHz frequency and the second RF power with 0.8~13.56 MHz frequency to the substrate to be etched. Set the power density on the upper side surface of the substrate and the bottom side surface of the electrode relative to the top side surface of the substrate in the range of 0.20~0.35 W/cm<2>and 1.13~3.39 W/cm<2>, respectively. The etching procedures stated above is then proceeded in the chlorine gas ambient such that the formation of silicon oxide as the device isolation region or silicon nitride film as the side wall film is completed. |
| priorityDate | 1997-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.