| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ad8a37a24718df64d141eb0dd1a0372 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1997-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d72653dc59901fe397e0b2ae80925c61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c25fd2fb2f877185a7a973547972165d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84cd7818b33b602ab7c65d6187700957
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa46d77d85ca60f1a5861b37a5decd5c |
| publicationDate |
2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-387112-B |
| titleOfInvention |
Method for removing damage layer |
| abstract |
The present invention discloses a method for removing damage layer of semiconductor resulted from high density plasma etching. The method includes (a) provide a CH3F plasma and (b) remove the damage layer by the plasma reacting with the damage layer. Thereafter, an etching layer with low-resistance and good profile is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115799061-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-202011101097-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115799061-B |
| priorityDate |
1997-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |