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publicationDate 1998-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-329535-B
titleOfInvention Plasma reactor with heated source of a polymerhardening precursor material
abstract A plasma etching method includes: Provide a chamber in which the process is proceeded; The object to be processed is supported by a carrier in the chamber; Supply a process gas consisting of at least the etching agent and the polymer precursor material; Supply a silicon or carbon source material, besides the process gas, to the chamber; Generate a kind of plasma in the chamber; Heat up the source material sufficiently at least to a degree that the reaction between the source surface and the plasma can be maintained.
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