| abstract |
A semiconductor device comprises: (1) on main surface of one semiconductor substrate (1, 101) with first-type conductive coefficient, on two dopant regions (2a, 2b, 3a, 3b, 101a, 103b) with second-type conductive coefficient with respect to the first-type conductive coefficient, forming one specified space and separating each other; (2) one channel region, formed between the two dopant regions; (3) one insulating thin film (4a, 4b, 104a, 104b), formed above the channel region to include the channel region; (4) one first electrode (5, 5b, 105, 105b), formed above the insulating thin film; (5) the insulating thin film (4a, 104a) has one uniform thickness and nitrogen-containing region (4a, 4f, 104f, 104f), where on two ends of the nitrogen-containing region there contains nitrogen, and contacts with the two dopant region each other. |