| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32018 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2021-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d56bb609991a83be2e464bb762317409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a687542562c0fe1ea14dc99aa0ec98fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e681da9902c29eef3705f667e3d77a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_407ddc19efc0608ac969ec3565ec50cf |
| publicationDate |
2021-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202147445-A |
| titleOfInvention |
Plasma processing apparatus |
| abstract |
A plasma processing apparatus includes a plasma processing chamber, a substrate support, a source RF generator, and a bias RF generator. The substrate support is disposed within the plasma processing chamber. The source RF generator is configured to generate a source RF signal. The source RF signal includes source cycles, and each of the source cycles includes a source ON state and a source OFF state. The source ON state has at least two source power levels. The bias RF generator is coupled to the substrate support and configured to generate a bias RF signal. The bias RF signal includes bias cycles corresponding to the source cycles, respectively. Each of the bias cycles includes a bias ON state and a bias OFF state. The bias ON state has at least two bias power levels. |
| priorityDate |
2020-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |