| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61ade740332975bcf864e60e29b80133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ea821499f0864fbdcfe18cd2debd063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96353d71f6178c7d6f9a91a5c38ed7ab |
| publicationDate |
2021-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202125633-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
The subject of the present invention is to use a relatively low-temperature process to form a pattern with a vertical cross-section when processing fine patterns using compound semiconductor materials or the like.nAs a solution, the method for manufacturing a semiconductor device is configured to include a process of etching a semiconductor material using plasma, a process of forming a damaged layer on the semiconductor material, and a process of removing the aforementioned damaged layer. |
| priorityDate |
2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |