| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4518874f0269f5177c5a92410ed1674
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bba7613c31bf8577906596a1105d313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c5e1c877f3a1c801352823769bac25a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca7055fea70ed6749e7973ceb01e128d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c |
| publicationDate |
2021-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202125625-A |
| titleOfInvention |
Etching method and plasma processing apparatus |
| abstract |
A disclosed etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. |
| priorityDate |
2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |