abstract |
The etching method disclosed in the present invention includes the step (a) of preparing a substrate in a chamber of a plasma processing device. The substrate includes a silicon-containing film. The etching method further includes a step (b) of etching the silicon-containing film by a chemical species derived from a plasma formed by a processing gas in the chamber. The processing gas includes phosphorus-containing gas, fluorine-containing gas, and hydrogen-containing gas. The hydrogen-containing gas includes at least one selected from the group consisting of hydrogen fluoride, H 2, ammonia, and hydrocarbons. |