http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202119499-A

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filingDate 2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd3dfd0df989c28f0c405ec738dfede
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publicationDate 2021-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202119499-A
titleOfInvention Semiconductor device manufacturing method, substrate processing device and program
abstract The subject of the present invention is to improve the characteristics of the oxide film formed on the substrate.nThe present invention includes the step of forming an oxide film containing X on the substrate by performing the following cycles for a predetermined number of times. The cycles are not simultaneously executed: (a) Supplying the substrate with the first atom X bonded to the center The raw material for the molecular structure of the base and the second group, and the bond energy between the first group and X is higher than the bond energy between the second group and X, and the substrate containing the first group bonded to X And (b) the step of supplying an oxidizing agent to the substrate to oxidize the first layer to form a second layer containing X; wherein, in (a), the first layer of X contained in the raw material The first group will not be detached but the second group will be detached, and under the condition that the second group is detached but the X that maintains the bonding state with the first group is adsorbed on the surface of the substrate, the raw material is supplied.
priorityDate 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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