| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54e30b215078f93139f17b8050a78255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b39760cad1e6752394946da4d08196f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d7422e268f9bffa99f0f8ee91bfe94f |
| publicationDate |
2021-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202117840-A |
| titleOfInvention |
Dry etching method, manufacturing method of semiconductor device and etching device |
| abstract |
The dry etching method according to the embodiment of the present invention is characterized in that β-diketone and nitrogen dioxide are formed on the surface of the treated body and include a metal with a MO binding energy of 5 eV or more or an etched film of the above-mentioned metal oxide. Reaction without being accompanied by plasma state etching. |
| priorityDate |
2019-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |