| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-12 |
| filingDate |
2020-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07cbdf5f3f756988709a8e97a99e4c30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a82a3e0b1270865b6271b438843eb73 |
| publicationDate |
2021-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202100805-A |
| titleOfInvention |
Dry etching method and manufacturing method of semiconductor device |
| abstract |
The dry etching method of the present invention is characterized in that: for a substrate with a silicon compound film, the silicon compound film is etched by plasmating the dry etchant through a mask with a specific opening pattern formed on the silicon compound film And the above dry etchant includes all the following first to fourth gases. The first gas: one or more compounds selected from the group consisting of iodofluorocarbons and bromofluorocarbons; the second gas: unsaturated fluorocarbons represented by C n F m ; the third gas: C x H y F z represents the hydrogen-containing unsaturated fluorocarbon; the fourth gas: oxidizing gas. |
| priorityDate |
2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |