| abstract |
Provided is a semiconductor structure including a substrate, an interconnect structure, a pad, a protective layer, and a bonding structure. The interconnect structure is disposed over the substrate. The pad is disposed over and electrically connected to the interconnect structure. A top surface of the pad has a probe mark and the probe mark has a concave surface. The protective layer conformally covers the top surface of the pad and the probe mark. The bonding structure is disposed over the protective layer. The bonding structure includes a bonding dielectric layer and a first bonding metal layer penetrating the bonding dielectric layer and the protective layer to electrically connected to the pad. |