| abstract |
The present invention provides a technology that can uniformly perform processing on a substrate.nThe technology provided by the present invention includes: a reaction tube, which processes a plurality of substrates; a substrate support part, which loads and supports a plurality of substrates in multiple stages; and a buffer chamber, which includes at least the support from the substrate support part From the height position of the substrate at the lower end to the height position of the substrate at the upper end and along the inner wall of the reaction tube, plasma is used to activate the processing gas; and the electrode for plasma generation, which penetrates the side of the reaction tube and extends from The lower part of the buffer chamber is inserted into the upper part, and high-frequency power is applied from the power source to activate the processing gas inside the buffer chamber. |