| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-24585 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2019-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a1bae90404c9b41999b1a50a1054f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcee71c0b8953c6bf06cd3a5d8b89774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f8d0bf8fd842c6fee698a0c1ede3353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed15979f74b08173a7bf11a16b005cc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8adbe360c0d40b0898258379e5fa32b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a028bd3a201f504f7744d73c3a369dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_854f7d2c411dbf6917412ecbb7a95e99 |
| publicationDate |
2020-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202030793-A |
| titleOfInvention |
Etching method and plasma processing device |
| abstract |
The surface roughness of the migration metal film can be suppressed and reduced, and the etching can be performed with high precision. For the migration metal film containing the migration metal element formed on the sample, the etching is performed according to the following process: the temperature of the sample is kept below 100°C, and the first migration metal oxide layer is formed isotropically on the surface of the migration metal film Process: The second process of supplying complex gas to the migrating metal oxide layer and raising the temperature of the sample to a specified temperature of 150°C or more and 250°C or less; keeping the temperature of the sample between 150°C and 250°C and making the error The third step in which the reactant produced by the reaction between the mixed gas and the migrating metal oxide formed in the first step is sublimated and removed; and the fourth step in which the sample is cooled. |
| priorityDate |
2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |