| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2019-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f67da1d1acda15c869b1c557111f9374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9450f16d8bf8c2b6938069d38289adab |
| publicationDate |
2020-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202030792-A |
| titleOfInvention |
Dry etching method and dry etching device |
| abstract |
According to the dry etching method using plasma, when the organic film is etched, the first step of shielding Ar ions and irradiating only oxygen radicals on the organic film of the sample is repeated alternately, and the organic film is irradiated with ions of rare gas The second procedure makes it possible to suppress the variability of the etching of the organic film and perform the etching process with high accuracy. Accordingly, the collapse of the LS pattern formed on the silicon substrate or the like can be suppressed. |
| priorityDate |
2019-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |