| abstract |
An etching method is provided. In the method, a substrate including an etching target film, a hard mask containing silicon and a patterned resist is provided. A protective film is formed on a surface of the substrate by generating a first plasma from one of a first gas containing carbon, fluorine and a first dilute gas, and a second gas containing carbon, hydrogen and the dilute gas. The hard mask is etched by generating a second plasma from a third gas after performing the step of forming the protective film. |