| abstract |
A method of depositing an oxide film on a template for patterning in semiconductor fabrication, includes: (i) providing a template having patterned structures thereon in a reaction space; and (ii) depositing an oxide film on the template by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a carrier gas and also as a dilution gas, thereby entirely covering with the oxide film an exposed top surface of the template and the patterned structures. |