| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_962adbf7d50e742218f3d536a63df612 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B41-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B37-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02 |
| filingDate |
2019-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5040f708f83a5298a98d1e2404a548e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1e26b37e9f452db64faa5f4b6b3a555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acae31c95f364755fef427298b3c461d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d5c8afa31f7d9cb36d5ef24349c3cd |
| publicationDate |
2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202027163-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
The subject of the present invention is to provide a method of manufacturing a semiconductor device, which is formed by a protective film containing a curable resin layer, which protects the bump neck of a semiconductor wafer provided with bumps, while simultaneously taking care of the semiconductor The thinning of the wafer and the warpage of the semiconductor wafer are suppressed. Moreover, the manufacturing method of the semiconductor device sequentially includes the following steps (A) to (E):n(A) A step of forming a curable resin layer on the bump forming surface of a semiconductor wafer with bumps,n(B) The step of hardening the aforementioned curable resin layer and forming a protective film,n(C) A step of attaching a back grinding tape to the formation surface of the protective film of the semiconductor wafer with the bumps,n(D) A step of polishing the opposite surface of the bump formation surface of the semiconductor wafer with the bumps while the back polishing tape is attached,n(E) The step of peeling the back polishing tape from the semiconductor wafer with the bumps after the polishing. |
| priorityDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |