Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03bd1fe7feec95c23e8c70af52a846d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dac6427e1491e284a61cfe18abae422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edba2985116680de99095858a5d4b080 |
publicationDate |
2020-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-202025289-A |
titleOfInvention |
Plasma processing apparatus and plasma processing method |
abstract |
A plasma processing apparatus includes a chamber and a substrate support stage provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support stage. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The power supply unit applies a second DC voltage to the lower electrode during the generation of plasma from the etching gas in the chamber, to etch the substrate placed on the substrate support stage. The second DC voltage is a negative DC voltage. The DC voltage output by the power supply unit is continuously switched from the first DC voltage to the second DC voltage. |
priorityDate |
2018-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |