| abstract |
The present invention provides a novel etching gas composition, which contains sulfur-containing compounds and can selectively etch SiO 2 for low-k materials (low-k materials (SiON, SiCN, SiOCN, SiOC)). The dry etching gas composition includes saturated and cyclic sulfur-containing fluorine expressed by the general formula (1): CxFySz (where x, y and z are 2≦x≦5, y≦2x, 1≦z≦2) Carbon compounds. |