| abstract |
An object of the present invention is to form a sacrificial film with a high wet etching rate having a selectivity for wet etching of a movable electrode when manufacturing a cantilever structure sensor using MEMS technology.nThe solution of the present invention is to provide a first process in which a substrate having a control electrode, a pedestal, and a counter electrode is carried into a processing chamber, and a non-plasma state containing impurities and silicon is supplied to the processing chamber from the first gas supply tube A technique of supplying a second processing gas in a plasma state containing oxygen from the second gas supply pipe to the processing chamber, and forming a sacrificial film containing the impurities on the control electrode, the pedestal, and the counter electrode. |