| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9002dee52adae51462aaf6ae9fbe6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e8e56f750511317e02f663555694e94 |
| publicationDate |
2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202013494-A |
| titleOfInvention |
Etching method and etching device |
| abstract |
Provide a technique that can improve the etching selectivity between different oxide films.n n n The etching method has an adsorption process and an etching process. The adsorption step is to supply the processing gas containing BCl 3 gas and the H 2 gas to the processing space where the object to be etched is disposed, stop the H 2 gas and apply power of a predetermined frequency to the processing space to generate it in the processing space Plasma allows the adsorbate based on the processing gas to be adsorbed on the body to be processed. The etching process generates a plasma of rare gas in the processing space to activate the adsorbate and etch the object to be processed. |
| priorityDate |
2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |