| abstract |
The object of the present invention is to provide a die-cut die-bonding film (DDAF) and a method of manufacturing a semiconductor device, the die-cut die-bonding film having an adhesive agent suitable as a die-bonding film suitable for suppressing the rise of the wafer in or after the die-bonding step Floor.nThe DDAF of the present invention includes a dicing tape 10 and an adhesive layer 20. The adhesive layer 20 is in close contact with the adhesive layer 12 of the dicing tape 10. In the first peeling test (100° C., peeling angle 180°, peeling speed 30 mm/min), the adhesive layer 20 exhibited a peeling adhesion of 180° of 0.5 to 5 N/10 mm to the Si plane. In addition, the adhesive layer 20 exhibited a 180° peeling adhesion force of 3 to 15 N/10 mm to the Si plane in the second peeling test (23°C, peeling angle 180°, peeling speed 30 mm/min). The method for manufacturing a semiconductor device of the present invention includes a crystal bonding step of a semiconductor wafer with an adhesive layer obtained through an expansion step using such DDAF. |