| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-28 |
| filingDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3df4e9a69bc01cea4d5e07bfe7acb5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bde9b50b484c80a8067ea309132cbb94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ba44ba405f53039ed365a68c5d8e10b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f774b4eed2f82d207165ea45a486327b |
| publicationDate |
2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202002296-A |
| titleOfInvention |
Semiconductor device |
| abstract |
The semiconductor device (1) has: a semiconductor layer (40) of 10 μm≦t si ≦30 μm, a metal layer (31) of 30 μm≦t ag <60 μm made of Ag, and a metal layer of 10 μm≦t ni <35 μm made of Ni (30), and transistors (10 and 20); the transistors (10 and 20) have a source electrode and a gate electrode on the main surface (40a) side of the semiconductor layer (40); the metal layer (31) is used as an electric The common drain region of the crystals (10 and 20) functions; the ratio of the long side length to the short side length of the semiconductor layer (40) is 1.73 or less; the ratio of the area of each electrode of the source electrode to the peripheral length is 0.127 or less; The sum of the areas of the source electrode and the gate electrode is 2.61 mm 2 or less; the length of the short side of the source electrode is 0.3 mm or less; and the following relationship holds. 702＜2.33×t si +10.5×t ag +8.90×t ni ＜943 |
| priorityDate |
2018-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |