| abstract |
The semiconductor device (1) has: a semiconductor layer (40) having a main surface (40a and 40b); a metal layer (31) made of a first metal material and being thicker than the semiconductor layer (40) and having a main surface ( 31a and 31b), and the main surface (31a) is in contact with the main surface (40b); the metal layer (30) is composed of a metal material with a Young's modulus greater than that of the first metal material, and is higher than the semiconductor layer (40 ) Is thicker and has a main surface (30a and 30b), and the main surface (30a) is in contact with the main surface (31b); and the transistor (10 and 20); the transistor (10) is on the semiconductor layer (40) The main surface (40a) side has a source electrode (11) and a gate electrode (19), and the transistor (20) has a source electrode (21) and a gate electrode on the main surface (40a) side of the semiconductor layer (40) (29); and the bidirectional path from the source electrode (11) through the metal layer (31) to the source electrode (21) is used as the main current path. |