| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate |
2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcbebbe17cd945b9b031f38ce27aed6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34b0474258d3a51d0cea50f36c9610a |
| publicationDate |
2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202002074-A |
| titleOfInvention |
Etching method and plasma processing device |
| abstract |
The method of the exemplary embodiment of the present invention includes the following steps: preparing a workpiece including a silicon film and a mask provided on the silicon film; using a plasma containing a gas containing a first halogen atom, the mask is used to apply the silicon film Etching; the plasma of the gas containing oxygen atoms, hydrogen atoms, and the second halogen atoms is used to modify the surface of the silicon film into an oxide layer, and the oxide layer includes the first region extending along the sidewall surface of the mask and The second region extending on the silicon film; the oxide layer is etched in such a way that the first region remains and the second region is removed; and by using a plasma containing a gas containing a third halogen atom, a mask and a first The oxide layer in the area etched the silicon film. |
| priorityDate |
2018-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |