| abstract |
A method for forming a thermally stable spacer layer is disclosed. The method includes the following steps: First, a substrate is set in the internal volume of the processing chamber. The substrate has a thin film formed on the substrate, the thin film including silicon, carbon, nitrogen, and hydrogen. Next, high-pressure steam is introduced into the processing chamber. The film is exposed to the high-pressure vapor to convert the film into a reacted film, which includes silicon, carbon, oxygen, and hydrogen. |