| abstract |
A semiconductor structure is disclosed, which includes a vertical field effect transistor (VFET) having a U-shaped semiconductor body. The semiconductor structure may be a standard VFET or a feedback VFET. In either example, the VFET includes a lower source / drain region, a semiconductor body located on the lower source / drain region, and an upper source / drain region located on top of the semiconductor body. The semiconductor body itself is bent in the Z direction to be substantially U-shaped (as seen from above), and does not have an elongated fin shape. The use of a U-shaped semiconductor body reduces the size of the VFET in the Z direction without reducing the end-to-end length of the semiconductor body. Therefore, the VFET cell height can be reduced without reducing the device drive current or violating key design rules. A method of forming a semiconductor structure is also disclosed. The semiconductor structure includes a VFET having a U-shaped semiconductor body. |