http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201939608-A

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filingDate 2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65d44d073fd68554e33e7243b991d1a7
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publicationDate 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201939608-A
titleOfInvention Hybrid wafer cutting method using multi-pass laser scribing process and plasma etching process
abstract This case describes a method for dicing a semiconductor wafer. In one example, a method of cutting a semiconductor wafer having an integrated circuit thereon involves the following steps: forming a mask over the semiconductor wafer, the mask consisting of a layer covering and protecting the integrated circuit. A multi-pass laser scribing process is then used to pattern the mask to provide a patterned mask with a gap exposed to the semiconductor wafer region between the integrated circuits. The multi-pass laser scribing process includes along the first edge. The first pass of the scribe path, the second pass of the scribe path along the center, the third pass of the scribe path along the second edge, the fourth pass of the scribe path along the second edge, and the fifth pass of the scribe path And the sixth pass along the path along the first edge. The semiconductor wafer is then etched through the gap plasma in the patterned mask to singulate the integrated circuit.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I782703-B
priorityDate 2018-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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