| abstract |
Embodiments include a method for forming a silicon nitride film on a substrate in a deposition chamber. In an embodiment, sequentially exposing the substrate to a sequence of processing gases includes: a silicon halide precursor, the silicon halide precursor being adsorbed on a surface of the substrate to form an adsorbed silicon halide layer; a first reaction gas The first reaction gas includes N 2 and one or two of Ar and He; and the second reaction gas includes the hydrogen-containing gas and one or more of Ar, He and N 2 . In an embodiment, the hydrogen-containing gas includes H 2 (molecular hydrogen), NH 3 (ammonia), N 2 H 2 (diazene), N 2 H 4 (hydrazine), and HN 3 (hydrogen azide). At least one of. Embodiments may include repeating the sequence until the silicon nitride film of a desired thickness is obtained. |