| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d6374710095afa09509ca75f7180463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c1b02984337a28cc0b8abeb1b7ab7a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef30c14bdb1b137d04663296b4f756d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6670ce26c0683eb0cd3577bdb6a4517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e72fd8cedb1b73d5008f3c2d1ab3be7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_208fd14dacbaa5877fc94a08898e80b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aba1743b53edceed017c1a58264faecf |
| publicationDate |
2019-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201920733-A |
| titleOfInvention |
Integrated atomic layer passivation and in-situ atomic layer passivation etching method in transformer-coupled plasma etching chamber |
| abstract |
A method for etching a substrate includes performing a first etching of a substrate material using a plasma etching process in a plasma chamber. The first etch forms features in the material to a first depth. After the first etching, the method includes: in a plasma chamber, performing an atomic layer passivation (ALP) process without removing a substrate from the chamber to deposit a passivation on a feature and a mask formed during the first etching. Conformal film. The ALP process uses vapor from a liquid precursor to form the passivation on the mask and features. The method further includes: performing a second etch of the material in the plasma chamber using the plasma etching process. The passivated conformal film is constructed to protect the sidewalls and masks of the features during the second etch. A plasma processing system is also described. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I714366-B |
| priorityDate |
2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |