| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716ced455c5edbe3e93066825dc8d4ef |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2018-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed7168938ea15561ce1a1cc708cbf4c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f17aebecaf2f37e5cff256acd40a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72a1327f36235aef636b3c7964fb5c3f |
| publicationDate |
2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201919127-A |
| titleOfInvention |
Improved metal contact positioning structure |
| abstract |
The processing method may be performed to form a semiconductor structure that may include a three-dimensional memory structure. The method may include the step of forming a plasma of a fluorine-containing precursor in the plasma region of the distal end of the processing chamber. The method may include the step of contacting the semiconductor substrate with the plasma effluent. The semiconductor substrate may be accommodated in the processing area of the processing chamber. The method may include the step of selectively cleaning the exposed nitride material using plasma effluent. The method may also include the steps of: subsequently depositing a cover material on the cleaned nitride material. The cover material may be selectively deposited on the nitride material relative to the exposed area of the dielectric material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I786471-B |
| priorityDate |
2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |