Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
2018-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d8df159cf92dd5e20fb8c0c9a8f6ebb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a882a27a168c10d36ad3550e3d07489 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48e426c9cc5fe43bafeff35b4518c505 |
publicationDate |
2019-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201907518-A |
titleOfInvention |
Semiconductor device manufacturing method, substrate processing device, and recording medium |
abstract |
The object of the present invention is to provide a technology that can realize components with good characteristics. The solution of the present invention is a method of manufacturing a semiconductor device, which has the steps of: carrying a substrate on which a wiring layer is formed into a processing chamber; The first etch stop film of the element 1 and the second element is supplied with the gas containing the first element, the gas containing the second element and the gas containing the third element on the first etch stop film to form The second etch stop film of the third element forms a stacked etch stop film. |
priorityDate |
2017-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |