| abstract |
Embodiments of the present technology may include a method of forming a stack of semiconductor layers. The method may include depositing a first silicon oxide layer on a substrate. The method may further include depositing a first silicon layer on the first silicon oxide layer. The method may further include depositing a first silicon nitride layer on the first silicon layer. Depositing the first silicon nitride layer or stress layer may include reducing stress in at least one of the first silicon layer, the first silicon oxide layer, or the substrate. In addition, the method may include depositing a second silicon layer on the first silicon nitride layer. The operation may form a stack of semiconductor layers, wherein the stack includes a first silicon oxide layer, a first silicon layer, a first silicon nitride layer, and a second silicon layer. |