| abstract |
The present invention relates to an N-face III family/nitride epitaxial structure and an active device therefor. Here, the N-Face AlGaN/GaN epitaxial structure comprises a substrate; an i-GaN (C-doped) layer on the substrate; and an i-Al(y)GaN on the i-GaN (C-doped) layer. a layer; an i-GaN channel layer on the i-Al(y)GaN layer; an i-Al(x) GaN layer on the i-GaN channel layer; and a layer in the i-Al(x)GaN layer a fluoride ion structure; and a first gate insulating dielectric layer on the fluoride ion structure, wherein x = 0.1 - 0.3, and y = 0.05 - 0.75. In the component design, the 2-DEG in the N-face III family/nitride epitaxial structure can exhibit a depletion state under the fluoride ion structure by the fluorine ion structure. At this time, the 2-DEG is located in the i-GaN channel layer and a junction of an i-Al(y)GaN layer; thereafter, a gallium nitride-reinforced AlGaN/GaN high-speed electron mobility transistor, a hybrid Schottky barrier diode or a hybrid component is fabricated by the above structure At this time, after the polarity inversion process step (that is, the stress generated by the insulating protective dielectric layer), the 2-DEG rises from the junction of the i-GaN channel layer and the i-Al(y)GaN layer. To the junction of the i-GaN channel layer and the i-Al(x) GaN layer. |