| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d8477f12666127f7c0381c03eb1efa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ec72b1af599a0b965df71d430fc766 |
| publicationDate |
2019-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201903829-A |
| titleOfInvention |
Selective growth of niobium nitride |
| abstract |
Provided herein are methods and apparatus for selectively depositing niobium nitride on a tantalum surface relative to a tantalum oxide surface, and selectively depositing tantalum nitride on the tantalum oxide surface relative to the tantalum surface. The method involves exposing a substrate to an olefin selectively reactive with a ruthenium surface prior to selectively depositing ruthenium nitride on the surface of the ruthenium oxide using thermal atomic layer deposition to block by forming an organic portion on the surface of the rutheniumē½ surface. The method involves exposing a substrate to an alkyl sulfonium halide selectively reactive with a ruthenium oxide surface prior to selective deposition of ruthenium nitride on the surface of the ruthenium using thermal atomic layer deposition, by ruthenium oxide An organic portion is formed on the surface to block the surface of the tantalum oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I798816-B |
| priorityDate |
2017-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |