| abstract |
SUMMARY OF THE INVENTION The present invention provides a technique for adjusting the in-plane distribution of gas concentration when supplying a gas to a wafer placed in a processing vessel.n n n In a plasma processing apparatus that processes a gas supplied to a wafer placed in a processing vessel, the processing chamber is partitioned into electricity that excites NF 3 gas, O 2 gas, and H 2 gas by a partition. The slurry space, and the processing space for free processing of the wafer. Then, the NF 3 gas, the O 2 gas, and the H 2 gas excited in the plasma space are supplied as a radical by the slit formed by the partition, and the center side of the stage below the partition is provided. The central gas supply unit and the peripheral side gas supply unit on the peripheral side of the stage are supplied with Ar gas. |