| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 |
| filingDate |
2018-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff7a9827027deae680d3a0a47bd8f300
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0858e8f608211ea73e67357acd607720
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b29e5429a4f08e4648420425dd9be9e7 |
| publicationDate |
2018-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201842575-A |
| titleOfInvention |
Control of directionality in atomic layer etching |
| abstract |
A method for performing atomic layer etching (ALE) on a substrate is provided. The method includes the following operations: performing a surface modification operation on a substrate surface, the surface modification operation being used for at least a single layer of the substrate surface Converted into a reforming layer, wherein a bias voltage is applied during the surface reforming operation, the bias voltage is used to control a depth of the surface of the substrate transformed by the surface reforming operation; A removing operation is used to remove at least a portion of the modified layer from the surface of the substrate, wherein the step of removing the portion of the modified layer is performed through a ligand exchange reaction, the The ligand exchange reaction is used to volatilize the portion of the modified layer. A plasma treatment may be performed after the removing operation to remove residues from the surface of the substrate. |
| priorityDate |
2017-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |