http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201840248-A

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filingDate 2018-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf014b8845cbb7480df904347f952588
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publicationDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201840248-A
titleOfInvention Plasma processing method and plasma processing device
abstract The present invention aims to suppress the generation of particles from a protective film for a member inside a protective chamber. A plasma processing method includes: a first film forming step, which uses a carbon-containing gas plasma to form a carbon film on the surface of a component inside the chamber; a second film forming step, which uses The silicon-containing gas is used to form a silicon-containing film on the surface of the carbon-containing film in accordance with the thickness of the carbon-containing film. The plasma treatment step is performed after the silicon-containing film is formed by processing the gas. Plasma plasma treatment of the object to be carried inside the chamber; the first removal step is to remove the object to be plasma treated to the outside of the chamber, and then use fluorine-containing The plasma of the gas removes the silicon-containing film from the surface of the carbon-containing film; and the second removing step removes the carbon-containing film from the surface of the component by the plasma of the oxygen-containing gas.
priorityDate 2017-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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